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| LED - Chip 25.02.2008 Radiation Infrared Type Point Source Technology AlGaAs/GaAs ELC-940-17-70 rev. 06 Electrodes P (anode) up typ. dimensions (m) O250 +10 -5 typ. thickness 260 (20) m emitting area cathode gold alloy, 0.5 m bonding area PS-09 anode gold alloy, 1.5 m O100 Maximum Ratings Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward current (DC) Peak forward current tP50 s, tP/T = 1/2 Symbol IF IFM Min Typ Max 100 120 Unit mA mA Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward voltage Reverse voltage Radiant power* Peak wavelength Spectral bandwidth at 50% Switching time IF = 100 mA IR = 100 A IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA Symbol VF VR e p 0.5 tr , tf 5 0.5 930 0,8 940 50 600 950 Min Typ 1.4 Max 1.6 Unit V V mW nm nm ns *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type EL-940-17-70 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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